Title: Modeling and Design of Silicon-Germanium Heterojunction Bipolar Transistors for Reliability-aware Circuit Design
Dr. Cressler, Advisor
Dr. Shen, Chair
The objective of the proposed research is to analyze the mechanisms of breakdown and aging in SiGe HBTs such that the deliverable, reliable performance of high-frequency SiGe HBT circuits and systems can be maximized. The anticipated results of this study will be the enablement of reliable higher power operation in SiGe HBT technologies through the design of novel superjunction collector devices, an enhanced understanding of device degradation under transient and RF stress conditions, and the development of device aging compact models to be incorporated in a circuit design environment.